Method for reworking copper metallurgy in semiconductor devices

Method for reworking copper metallurgy in semiconductor devices

Field of the Invention A method of reworking copper metallurgy on semiconductor devices which includes selective removal of insulator, selective removal of copper, non-selective removal of copper and insulator followed by the redeposition of an insulating copper barrier layer and at least one metall...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Curran, Jr., Thomas F, Krywanczyk, Timothy C, Lube, Michael S, Moon, Matthew D, Nadeau, Rock, Reynolds, Clark D, Schaffer, Dean A, Sharrow, Joel M, Smith, Jr., Paul H, Thomas, David C, White, Eric J, Yao, Kenneth H
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Field of the Invention A method of reworking copper metallurgy on semiconductor devices which includes selective removal of insulator, selective removal of copper, non-selective removal of copper and insulator followed by the redeposition of an insulating copper barrier layer and at least one metallurgical interconnect layer.