Reinforced integrated circuits

This application relates to the manufacture of integrated circuits. A method of manufacturing integrated circuits wherein a conductive structure in a topmost semiconductive layer of an integrated circuit is provided having a thickness greater than or equal to 1.5 m. The thickness of the conductive structure is sufficiently great as to effectively protect any layers beneath the topmost semiconductive layer from damage from pressure, such as pressure applied by testing probes. In a preferred embodiment, traditional aluminum TD leveling is discarded in favor of gold deposited upon the thickened conductive layer.