Method for improving uniformity in deposited low k dielectric material

A method for forming a low k dielectric material block is provided. In one example, the method includes depositing a low k dielectric layer over a semiconductor substrate and curing the deposited low k dielectric layer. The curing may be performed using a remote plasma process in which an excitation gas is excited in a selected region remote from the deposited low k dieletric layer to carry radiation energy and transfer to the low k dielectric layer when the excitation gas contacts the low k dielectric layer.