Electrically programmable memory element with improved contacts

Electrically programmable memory element with improved contacts

An electrically operated memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contact being a thin-film layer having a sidewall electrical coupled to the memory material.

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Bibliographische Detailangaben
Hauptverfasser: Kostylev, Sergey, Ovshinsky, Stanford, Czubatyi, Wolodymyr, Klersy, Patrick, Pashmakov, Boil
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An electrically operated memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contact being a thin-film layer having a sidewall electrical coupled to the memory material.