Method for fabricating a trench isolation structure
Method for fabricating a trench isolation structure The invention provides a method for fabricating a trench isolation structure, comprising the following steps: forming a mask ( 3 ) on a substrate ( 1 ); forming at least one trench ( 2 ) in the substrate ( 1 ) by means of the mask ( 3 ); carrying o...
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| creator | Klipp, Andreas Mothes, Kerstin Schmitt, Florian Hollatz, Mark |
| description | Method for fabricating a trench isolation structure The invention provides a method for fabricating a trench isolation structure, comprising the following steps: forming a mask (
3
) on a substrate (
1
); forming at least one trench (
2
) in the substrate (
1
) by means of the mask (
3
); carrying out selective deposition of a first insulation material (
5
) to at least partially fill the at least one trench (
2
) in the substrate (
1
) with the insulation material (
5
) in the presence of the mask (
3
); and applying a second insulation material (
6
) over the entire surface of the structure in order to fill the at least one trench (
2
) in the substrate (
1
) at least up to the top side of the mask (
3
). |
| format | Patent |
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3
) on a substrate (
1
); forming at least one trench (
2
) in the substrate (
1
) by means of the mask (
3
); carrying out selective deposition of a first insulation material (
5
) to at least partially fill the at least one trench (
2
) in the substrate (
1
) with the insulation material (
5
) in the presence of the mask (
3
); and applying a second insulation material (
6
) over the entire surface of the structure in order to fill the at least one trench (
2
) in the substrate (
1
) at least up to the top side of the mask (
3
).</description><language>eng</language><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20040253834$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,869,881,64032</link.rule.ids><linktorsrc>$$Uhttps://patentcenter.uspto.gov/applications/10812418$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Klipp, Andreas</creatorcontrib><creatorcontrib>Mothes, Kerstin</creatorcontrib><creatorcontrib>Schmitt, Florian</creatorcontrib><creatorcontrib>Hollatz, Mark</creatorcontrib><title>Method for fabricating a trench isolation structure</title><description>Method for fabricating a trench isolation structure The invention provides a method for fabricating a trench isolation structure, comprising the following steps: forming a mask (
3
) on a substrate (
1
); forming at least one trench (
2
) in the substrate (
1
) by means of the mask (
3
); carrying out selective deposition of a first insulation material (
5
) to at least partially fill the at least one trench (
2
) in the substrate (
1
) with the insulation material (
5
) in the presence of the mask (
3
); and applying a second insulation material (
6
) over the entire surface of the structure in order to fill the at least one trench (
2
) in the substrate (
1
) at least up to the top side of the mask (
3
).</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EFI</sourceid><recordid>eNrjZDD2TS3JyE9RSMsvUkhLTCrKTE4sycxLV0hUKClKzUvOUMgszs8BCuXnKRSXFJUml5QWpfIwsKYl5hSn8kJpbgZNN9cQZw_d0uKCxJLUvJLi-MSCghywUfl5xfFGBgYmBkamxhbGJsakqAUAdTMzsg</recordid><startdate>20041216</startdate><enddate>20041216</enddate><creator>Klipp, Andreas</creator><creator>Mothes, Kerstin</creator><creator>Schmitt, Florian</creator><creator>Hollatz, Mark</creator><scope>EFI</scope></search><sort><creationdate>20041216</creationdate><title>Method for fabricating a trench isolation structure</title><author>Klipp, Andreas ; Mothes, Kerstin ; Schmitt, Florian ; Hollatz, Mark</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_applications_200402538343</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Klipp, Andreas</creatorcontrib><creatorcontrib>Mothes, Kerstin</creatorcontrib><creatorcontrib>Schmitt, Florian</creatorcontrib><creatorcontrib>Hollatz, Mark</creatorcontrib><collection>USPTO Published Applications</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Klipp, Andreas</au><au>Mothes, Kerstin</au><au>Schmitt, Florian</au><au>Hollatz, Mark</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for fabricating a trench isolation structure</title><date>2004-12-16</date><risdate>2004</risdate><abstract>Method for fabricating a trench isolation structure The invention provides a method for fabricating a trench isolation structure, comprising the following steps: forming a mask (
3
) on a substrate (
1
); forming at least one trench (
2
) in the substrate (
1
) by means of the mask (
3
); carrying out selective deposition of a first insulation material (
5
) to at least partially fill the at least one trench (
2
) in the substrate (
1
) with the insulation material (
5
) in the presence of the mask (
3
); and applying a second insulation material (
6
) over the entire surface of the structure in order to fill the at least one trench (
2
) in the substrate (
1
) at least up to the top side of the mask (
3
).</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
| recordid | cdi_uspatents_applications_20040253834 |
| source | USPTO Published Applications |
| title | Method for fabricating a trench isolation structure |
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