Semiconductor device, liquid crystal display device, semicondutor film producing method, and semiconductor device producing method

This invention concerns with a semiconductor device which is characterized in that the device is provided with a thin film transistor 40 having a polycrystalline semiconductor layer 11 , the semiconductor layer 11 including a channel area 22 , highly doped drain areas 24, 17 positioned on both sides of the channel area 22 and LDD areas 18 a , 18 b positioned between the channel area 22 and the highly doped drain areas 24, 17 and lower in dopant density than the highly doped drain areas 24, 17 , wherein any diameter of the crystal 14 at least partly existing in the LDD area 18 b is larger than the size of other crystals 15.