Semiconductor device and method for manufacturing the same

There is provided a semiconductor device having such a protective film that selectively covers the surface of embedded interconnects and can effectively prevent both of the oxidation and the thermal diffusion of the interconnects. A method for manufacturing such a semiconductor device is also provided. The semiconductor device includes: a semiconductor substrate having an embedded interconnect structure in which the embedded interconnects have an exposed surface; and a protective film composed of a multi-layer laminated film formed selectively on the exposed surface of interconnects. The multi-layer laminated film preferably includes an oxidation-preventing layer, composed of e.g. a Ni or Ni alloy layer, for preventing oxidation of the interconnects, and a thermal diffusion-preventing layer, composed of e.g. a Co or Co alloy layer, for preventing thermal diffusion of the interconnects.