Method to improve breakdown voltage by H2 plasma treat
A new method is provided for the improvement of breakdown performance of a layer of dielectric and the removal of a layer of copper oxide (CuO) from copper interconnects. The formed layer of dielectric, thereby including a formed layer of CuO or Cu 2 O is, using the invention, exposed to a H 2 plasm...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A new method is provided for the improvement of breakdown performance of a layer of dielectric and the removal of a layer of copper oxide (CuO) from copper interconnects. The formed layer of dielectric, thereby including a formed layer of CuO or Cu
2
O is, using the invention, exposed to a H
2
plasma treatment. The H
2
plasma treatment reduces the dielectric constant of the exposed and surrounding layer of low-k dielectric while at the same time removing the layer of CuO. |
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