FLIP-CHIP LIGHT EMITTING DIODE WITH INDIUM-TIN-OXIDE BASED REFLECTING CONTACTS
A flip chip light emitting diode die ( 12 ) includes a light-transmissive substrate ( 20 ) and a plurality of semiconductor layers ( 22 ) are disposed on the light-transmissive substrate ( 20 ). The semiconductor layers ( 22 ) define a light-generating p/n junction. An electrode ( 30 ) is formed on...
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| creator | Eliashevich, Ivan Venugopalan, Hari |
| description | A flip chip light emitting diode die (
12
) includes a light-transmissive substrate (
20
) and a plurality of semiconductor layers (
22
) are disposed on the light-transmissive substrate (
20
). The semiconductor layers (
22
) define a light-generating p/n junction. An electrode (
30
) is formed on the semiconductor layers (
22
) for flip-chip bonding the diode die (
12
) to an associated mount (
14
). The electrode (
30
) includes an optically transparent layer (
42
) formed of a substantially optically transparent material adjacent to the semiconductor layers (
22
) that makes ohmic contact therewith, and a reflective layer (
44
) adjacent to the optically transparent layer (
42
) and in electrically conductive communication therewith. |
| format | Patent |
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12
) includes a light-transmissive substrate (
20
) and a plurality of semiconductor layers (
22
) are disposed on the light-transmissive substrate (
20
). The semiconductor layers (
22
) define a light-generating p/n junction. An electrode (
30
) is formed on the semiconductor layers (
22
) for flip-chip bonding the diode die (
12
) to an associated mount (
14
). The electrode (
30
) includes an optically transparent layer (
42
) formed of a substantially optically transparent material adjacent to the semiconductor layers (
22
) that makes ohmic contact therewith, and a reflective layer (
44
) adjacent to the optically transparent layer (
42
) and in electrically conductive communication therewith.</description><language>eng</language><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20040201110$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,869,881,64032</link.rule.ids><linktorsrc>$$Uhttps://patentcenter.uspto.gov/applications/10249436$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Eliashevich, Ivan</creatorcontrib><creatorcontrib>Venugopalan, Hari</creatorcontrib><title>FLIP-CHIP LIGHT EMITTING DIODE WITH INDIUM-TIN-OXIDE BASED REFLECTING CONTACTS</title><description>A flip chip light emitting diode die (
12
) includes a light-transmissive substrate (
20
) and a plurality of semiconductor layers (
22
) are disposed on the light-transmissive substrate (
20
). The semiconductor layers (
22
) define a light-generating p/n junction. An electrode (
30
) is formed on the semiconductor layers (
22
) for flip-chip bonding the diode die (
12
) to an associated mount (
14
). The electrode (
30
) includes an optically transparent layer (
42
) formed of a substantially optically transparent material adjacent to the semiconductor layers (
22
) that makes ohmic contact therewith, and a reflective layer (
44
) adjacent to the optically transparent layer (
42
) and in electrically conductive communication therewith.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EFI</sourceid><recordid>eNrjZPBz8_EM0HX28AxQ8PF09whRcPX1DAnx9HNXcPH0d3FVCPcM8VDw9HPxDPXVBQrr-kd4AkWdHINdXRSCXN18XJ3Bip39_UIcnUOCeRhY0xJzilN5oTQ3g6aba4izh25pcUFiSWpeSXF8YkFBTmZyYklmfl5xvJGBgYmBkYGhoaGBMSlqAXtjNTY</recordid><startdate>20041014</startdate><enddate>20041014</enddate><creator>Eliashevich, Ivan</creator><creator>Venugopalan, Hari</creator><scope>EFI</scope></search><sort><creationdate>20041014</creationdate><title>FLIP-CHIP LIGHT EMITTING DIODE WITH INDIUM-TIN-OXIDE BASED REFLECTING CONTACTS</title><author>Eliashevich, Ivan ; Venugopalan, Hari</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_applications_200402011103</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Eliashevich, Ivan</creatorcontrib><creatorcontrib>Venugopalan, Hari</creatorcontrib><collection>USPTO Published Applications</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Eliashevich, Ivan</au><au>Venugopalan, Hari</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FLIP-CHIP LIGHT EMITTING DIODE WITH INDIUM-TIN-OXIDE BASED REFLECTING CONTACTS</title><date>2004-10-14</date><risdate>2004</risdate><abstract>A flip chip light emitting diode die (
12
) includes a light-transmissive substrate (
20
) and a plurality of semiconductor layers (
22
) are disposed on the light-transmissive substrate (
20
). The semiconductor layers (
22
) define a light-generating p/n junction. An electrode (
30
) is formed on the semiconductor layers (
22
) for flip-chip bonding the diode die (
12
) to an associated mount (
14
). The electrode (
30
) includes an optically transparent layer (
42
) formed of a substantially optically transparent material adjacent to the semiconductor layers (
22
) that makes ohmic contact therewith, and a reflective layer (
44
) adjacent to the optically transparent layer (
42
) and in electrically conductive communication therewith.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
| recordid | cdi_uspatents_applications_20040201110 |
| source | USPTO Published Applications |
| title | FLIP-CHIP LIGHT EMITTING DIODE WITH INDIUM-TIN-OXIDE BASED REFLECTING CONTACTS |
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