FLIP-CHIP LIGHT EMITTING DIODE WITH INDIUM-TIN-OXIDE BASED REFLECTING CONTACTS
A flip chip light emitting diode die ( 12 ) includes a light-transmissive substrate ( 20 ) and a plurality of semiconductor layers ( 22 ) are disposed on the light-transmissive substrate ( 20 ). The semiconductor layers ( 22 ) define a light-generating p/n junction. An electrode ( 30 ) is formed on...
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| Sprache: | eng |
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| Zusammenfassung: | A flip chip light emitting diode die (
12
) includes a light-transmissive substrate (
20
) and a plurality of semiconductor layers (
22
) are disposed on the light-transmissive substrate (
20
). The semiconductor layers (
22
) define a light-generating p/n junction. An electrode (
30
) is formed on the semiconductor layers (
22
) for flip-chip bonding the diode die (
12
) to an associated mount (
14
). The electrode (
30
) includes an optically transparent layer (
42
) formed of a substantially optically transparent material adjacent to the semiconductor layers (
22
) that makes ohmic contact therewith, and a reflective layer (
44
) adjacent to the optically transparent layer (
42
) and in electrically conductive communication therewith. |
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