RF amplifier with improved impedance matching

An amplifier having first and second enhancement-mode Field Effect Transistors (FETs) is disclosed. The input port receives an input signal that is to be amplified. The source of the first FET is connected to the input port such that the first FET provides an input impedance match for a signal sourc...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Chow, Yut Hoong
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An amplifier having first and second enhancement-mode Field Effect Transistors (FETs) is disclosed. The input port receives an input signal that is to be amplified. The source of the first FET is connected to the input port such that the first FET provides an input impedance match for a signal source connected to the input port. The gate of the second FET is connected to the drain of the first FET such that the second FET amplifies the output signal from the drain of the first FET to provide an amplified input signal. The first and second FETs form a current mirror. An output circuit provides a predetermined output impedance at an output port for coupling the amplified input signal to a circuit that is external to the amplifier. In one embodiment of the invention, the output circuit includes a third FET connected as a source follower with the second FET.