Measurement of components that have been micro-galvanically produced, using a sample component by means of photoresist webs

The method according to the present invention for measuring microgalvanically produced components ( 23′ ) having a three-dimensional, depth-lithographically produced structure, is distinguished in that the single- or multilayer component ( 23′ ) is constructed using galvanic metal deposition, the me...

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Bibliographische Detailangaben
1. Verfasser: Dantes, Guenter
Format: Patent
Sprache:eng
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Zusammenfassung:The method according to the present invention for measuring microgalvanically produced components ( 23′ ) having a three-dimensional, depth-lithographically produced structure, is distinguished in that the single- or multilayer component ( 23′ ) is constructed using galvanic metal deposition, the metal being deposited around a structure of photoresist defining the desired orifice contour ( 40, 41, 42 ) of the component; in the process, a photoresist region ( 45 ), which selectively interrupts the structure of the component ( 23′ ) to be manufactured, being incorporated during the microgalvanic production; at least the interrupting photoresist region ( 45 ) being dissolved out of the interrupted component ( 23′ ); and a contactless measuring of the orifice structure of the interrupted component ( 23′ ) being undertaken in the region of a previously existing resist edge ( 46 ) of the photoresist region ( 45 ) using a measuring device.