Measurement of components that have been micro-galvanically produced, using a sample component by means of photoresist webs
The method according to the present invention for measuring microgalvanically produced components ( 23′ ) having a three-dimensional, depth-lithographically produced structure, is distinguished in that the single- or multilayer component ( 23′ ) is constructed using galvanic metal deposition, the me...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | The method according to the present invention for measuring microgalvanically produced components (
23′
) having a three-dimensional, depth-lithographically produced structure, is distinguished in that the single- or multilayer component (
23′
) is constructed using galvanic metal deposition, the metal being deposited around a structure of photoresist defining the desired orifice contour (
40, 41, 42
) of the component; in the process, a photoresist region (
45
), which selectively interrupts the structure of the component (
23′
) to be manufactured, being incorporated during the microgalvanic production; at least the interrupting photoresist region (
45
) being dissolved out of the interrupted component (
23′
); and a contactless measuring of the orifice structure of the interrupted component (
23′
) being undertaken in the region of a previously existing resist edge (
46
) of the photoresist region (
45
) using a measuring device. |
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