Method to enhance epi-regrowth in amorphous poly CB contacts

In a method of preparing a DRAM wherein doped poly-Si is used as a CB contact as well as a source of doping in the contact region, and where in amorphous Si is used to fill the CB contact, the improvement of enhancing epitaxial regrowth in amorphous Poly CB contacts, comprising: a) affecting a CB liner reactive ion etch on a substrate to remove SiN and SiO; b) affecting an O plasma clean (in-situ or ex-situ); c) affecting a Huang AB clean; d) affecting a dilute hydrofluoric acid (DHF) clean; e) depositing amorphous Si; and f) annealing to recrystallize and regrow amorphous CB.