Method and device for producing globular grains of high-puroty silicon having a diameter of between 50 um and 300um and use of the same
The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt ( 6 ) in an ultrasonic field ( 10 ). Globular grains having a grain size of 50 m can be produced by means of said method and device and can be used to separate high-purity...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt (
6
) in an ultrasonic field (
10
). Globular grains having a grain size of 50 m can be produced by means of said method and device and can be used to separate high-purity silicon from silane in the fluid bed. The silicon melt (
6
) is fed into the ultrasonic field (
10
) at a distance of |
|---|