Semiconductor device and method of manufacturing such a semiconductor device
A semiconductor device comprises a semiconductor body ( 1 ) which is provided at a surface ( 2 ) with a non-volatile memory cell comprising a source ( 3 ) and a drain ( 4 ), and an access gate ( 14 ) which is electrically insulated from a gate structure ( 8 ) comprising a control gate ( 9 ), the gat...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A semiconductor device comprises a semiconductor body (
1
) which is provided at a surface (
2
) with a non-volatile memory cell comprising a source (
3
) and a drain (
4
), and an access gate (
14
) which is electrically insulated from a gate structure (
8
) comprising a control gate (
9
), the gate structure (
8
) being electrically insulated from the semiconductor body (
1
) by a gate dielectric (
11,25
). The gate dielectric (
11,25
) is provided with a charge-storage region wherein data in the form of electric charge can be stored. The access gate (
14
) has a substantially flat surface portion (
17
) extending substantially parallel to the surface (
2
) of the semiconductor body (
1
) and has the shape of a block which is disposed against the gate structure (
8
) without overlapping the gate structure (
8
). |
|---|