Dechucking with N2/O2 plasma
A method for dechucking a wafer placed on an electrostatic chuck after plasma processing of the wafer comprises the steps of providing a flow of nitrogen and oxygen, maintaining a N 2 /O 2 plasma in the chamber; and changing the electric potential of a chuck electrode to a dechucking electric potent...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for dechucking a wafer placed on an electrostatic chuck after plasma processing of the wafer comprises the steps of providing a flow of nitrogen and oxygen, maintaining a N
2
/O
2
plasma in the chamber; and changing the electric potential of a chuck electrode to a dechucking electric potential before turning off the plasma. |
|---|