ABNORMAL PHOTORESIST LINE/SPACE PROFILE DETECTION THROUGH SIGNAL PROCESSING OF METROLOGY WAVEFORM

A semiconductor manufacturing automation method for analyzing a patterned feature formed on a semiconductor layer is disclosed. At least one patterned feature is scanned to generate an amplitude modulated waveform signal of the line and neighboring space characteristics. Signal processing is automat...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Houge, Erik, Jessen, Scott, McIntosh, John, Vartuli, Catherine, Stevie, Fred
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A semiconductor manufacturing automation method for analyzing a patterned feature formed on a semiconductor layer is disclosed. At least one patterned feature is scanned to generate an amplitude modulated waveform signal of the line and neighboring space characteristics. Signal processing is automatically performed on this waveform by an in-line computational source to extract known patterned features based on the profile of the amplitude modulated waveform signal. The extracted waveform segments are subjected to known geometric shapes to determine if the waveform indicates a normal or abnormal patterned feature on a semiconductor layer.