Method for fabricating low-temperature polysilicon organic electroluminescent device

A method for fabricating a low temperature polysilicon organic electroluminescent substrate comprises the following steps: providing a substrate; forming an amorphous silicon layer on the substrate; forming a plurality of patterned transistor elements each having a patterned source, a patterned drain and a patterned gate in the amorphous silicon layer by photolithography and ion doping; annealing the patterned transistor element having the patterned source, drain and gate by excimer laser; forming a plurality of patterned stripe second conductive lines connected to the gates on the surface of the substrate; forming a patterned isolation layer on the gate layer, and also forming a plurality of patterned stripe first conductive lines and a patterned first electrode on the substrate; forming at least one organic electroluminescent medium on the first electrode; and forming a second electrode layer on the organic electroluminescent medium.