Electrode forming method and field effect transistor
A gate electrode is formed in the following manner. A first resist layer having a first opening is formed on a semiconductor substrate. A second resist layer having a second opening larger than the first opening is formed on the first resist layer. A first conductor layer containing a high-melting-p...
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| Sprache: | eng |
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| Zusammenfassung: | A gate electrode is formed in the following manner. A first resist layer having a first opening is formed on a semiconductor substrate. A second resist layer having a second opening larger than the first opening is formed on the first resist layer. A first conductor layer containing a high-melting-point metal is formed. Subsequently, a second conductor layer containing low-resistance metal is formed, and then the first conductor layer within the second opening is removed by etching. Next, the second resist layer is removed by a lift-off process, and finally the first resist layer is removed by ashing. |
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