Amplified photoconductive gate
The present invention includes a semiconductor epitaxial structure optimized for photoconductive free space terahertz generation and detection; and amplifier circuits for photoconductively sampled terahertz detection which may employ the optimized epitaxial structures.
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| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
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| Zusammenfassung: | The present invention includes a semiconductor epitaxial structure optimized for photoconductive free space terahertz generation and detection; and amplifier circuits for photoconductively sampled terahertz detection which may employ the optimized epitaxial structures. |
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