X-ray exposure method, x-ray exposure apparatus, fine structure and semiconductor device

Provided are an X-ray exposure method and an X-ray exposure apparatus capable of using exposure X-rays of short wavelengths advantageous for formation of a fine pattern by suppressing a fogging effect due to secondary electrons from a substrate enhanced in company with use of the exposure X-rays of short wavelengths; and a fine structure and a semiconductor device using the same. An X-ray exposure method includes the steps of: forming, by coating, a resist film on a substrate made of a material having an absorption-edge in and near an illumination wavelength range; and illuminating said resist film with X-rays in a wavelength range including said absorption-edge wavelength through an X-ray mask, wherein exposure is performed providing means for reducing X-ray intensity in the wavelength range of an absorption spectrum to which the absorption-edge of the material of the substrate belongs in an optical path leading to the substrate.