Method and device for growing large-volume oriented monocrystals

The invention relates to a method for growing large-volume monocrystals with a uniform orientation and consisting of a melt of crystal raw material, in a device comprising a sealable housing ( 10 ) in which a melting vessel ( 20 ) with side walls ( 22 ), a bottom ( 24 ), a top opening ( 26 ) facing said bottom ( 24 ) and optionally a lid ( 28 ) are located; and at least one heating element ( 50, 50 ′). According to said method, a crystal raw material in the melting vessel ( 20 ) is heated with heating elements ( 50, 50 ′) to a temperature above the melting point until a melt with a surface is formed. A monocrystal is then formed on the bottom of the melting vessel by lowering the temperature to at least the crystallisation point. Said monocrystal forms a solid/liquid interphase with the melt and grows towards the melt surface on said interphase, in a direction that is perpendicular to the interphase. An even interphase with a radius of curvature of at least one metre is produced during the crystal growing process by applying a vertical, axial temperature gradient between the bottom ( 24 ) of the melt vessel ( 20 ) and its top opening ( 26 ) and preventing heat from entering and/or leaving through the side walls ( 22 ).