Electro-optical apparatus, driving substrate for an electro-optical apparatus and method of manufacturing them

Single crystal silicon is graphoepitaxially grown using a step formed on a substrate as a seed by a catalyst PVD process or the like, and the obtained single crystal silicon layer is used for a dual gate type MOSTFT in an electro-optical apparatus such as a display section-peripheral driving circuit integration type LCD. A single crystal silicon thin film of high electron/hole mobility is formed into a film uniformly at a relatively low temperature, which enables to manufacture an active matrix substrate incorporated with a high performance driver and an electro-optical apparatus such as a thin film semiconductor device for display use using the same, enables to constitute an integrated structure including a display section comprising nMOS or pMOS TFT having an LDD structure of high switching characteristics and low leak current and a peripheral circuit comprising CMOS, nMOS or pMOS TFT or a combination thereof having a high driving performance, and can attain a display panel of high image quality, high fineness, narrow frame edge, high efficiency and enlarged screen area, and enables to use a large glass substrate with a relatively low distortion point, attain high productivity, cost down with no requirement of expensive manufacturing facilities and, further, and conduct easy control for the threshold value, making it possible for high speed operation by reducing the resistance.