Method of depositing a metallic film on a substrate
The present invention relates to a method of depositing a metallic film on a substrate. This method uses a carrier gas to deposit a source metal in the presence of a reducing agent such that the rate of deposition can be controlled by controlling the flow rate of the carrier gas, the substrate tempe...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention relates to a method of depositing a metallic film on a substrate. This method uses a carrier gas to deposit a source metal in the presence of a reducing agent such that the rate of deposition can be controlled by controlling the flow rate of the carrier gas, the substrate temperature, the pulse widths of the metal source and reducing agents, and the number of deposition phases. |
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