Semiconductor device and method of manufacturing the same
A manufacturing method of a semiconductor device comprises the steps of forming an etching stop insulating film ( 18 ) that covers at least side surfaces of a wiring ( 16 ) in a first region ( 2 ) and a first-stage conductive plug ( 15 b ) in a second region ( 3 ), then forming insulating films ( 20...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A manufacturing method of a semiconductor device comprises the steps of forming an etching stop insulating film (
18
) that covers at least side surfaces of a wiring (
16
) in a first region (
2
) and a first-stage conductive plug (
15
b
) in a second region (
3
), then forming insulating films (
20, 28
) on the etching stop insulating film (
18
) and the wiring (
16
), then forming a hole (
28
) on a first-stage conductive plug (
15
b
) by etching a part of the insulating films (
20, 28
) until the etching stop insulating film (
18
) is exposed, then exposing an upper surface of the first-stage conductive plug (
15
b
) by etching selectively the etching stop insulating film (
18
) through the hole (
28
), and then forming a second-stage conductive plug (
31
a
) in the hole (
28
). |
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