Method for depositing an adhesion-promoting layer on a metallic layer of a chip
A method for depositing an adhesion-promoting layer on a spatially bounded metallic layer of a silicon chip is provided. The adhesion-promoting layer is deposited, using at least one wet-chemical process. During the wet-chemical process, the concentration of an inhibitor of a multi-component process...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for depositing an adhesion-promoting layer on a spatially bounded metallic layer of a silicon chip is provided. The adhesion-promoting layer is deposited, using at least one wet-chemical process. During the wet-chemical process, the concentration of an inhibitor of a multi-component process bath is checked in at least approximately continuous manner and adjusted to a constant value. The adjustment of the inhibitor concentration is independent of the adjustment of the concentrations of other process-bath components. |
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