Compounds for forming alumina films using chemical vapor deposition method and process for preparing the compound

Compounds for forming alumina films using chemical vapor deposition method and process for preparing the compound

Organometallic compounds useful for forming aluminum films by chemical vapor deposition are disclosed. Also disclosed are methods of preparing the organometallic compounds and methods of forming aluminum films.

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Shin, Hyun-Koock
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Shin, Hyun-Koock
description Organometallic compounds useful for forming aluminum films by chemical vapor deposition are disclosed. Also disclosed are methods of preparing the organometallic compounds and methods of forming aluminum films.
format Patent
fullrecord <record><control><sourceid>uspatents_EFI</sourceid><recordid>TN_cdi_uspatents_applications_20030010256</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>20030010256</sourcerecordid><originalsourceid>FETCH-uspatents_applications_200300102563</originalsourceid><addsrcrecordid>eNqVjc0KwjAQhHvxIOo77NWDEFv0BYriA3gvS7K1gfys2cTnN8G-gIdhYPhmZtu9x-g5lmAE5piavA0vQFeqI8zWeYEiLdMLeavRwQe5ooY4is02BvCUl2gAgwFOUZP8xjgRY2rVvBDo9WjfbWZ0QofVd93xfnuOj1MRxkwhy4TMrj61bZl6pQalzqq_XId_2C_eDktL</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Compounds for forming alumina films using chemical vapor deposition method and process for preparing the compound</title><source>USPTO Published Applications</source><creator>Shin, Hyun-Koock</creator><creatorcontrib>Shin, Hyun-Koock</creatorcontrib><description>Organometallic compounds useful for forming aluminum films by chemical vapor deposition are disclosed. Also disclosed are methods of preparing the organometallic compounds and methods of forming aluminum films.</description><language>eng</language><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20030010256$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,869,881,64032</link.rule.ids><linktorsrc>$$Uhttps://patentcenter.uspto.gov/applications/10135190$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Shin, Hyun-Koock</creatorcontrib><title>Compounds for forming alumina films using chemical vapor deposition method and process for preparing the compound</title><description>Organometallic compounds useful for forming aluminum films by chemical vapor deposition are disclosed. Also disclosed are methods of preparing the organometallic compounds and methods of forming aluminum films.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EFI</sourceid><recordid>eNqVjc0KwjAQhHvxIOo77NWDEFv0BYriA3gvS7K1gfys2cTnN8G-gIdhYPhmZtu9x-g5lmAE5piavA0vQFeqI8zWeYEiLdMLeavRwQe5ooY4is02BvCUl2gAgwFOUZP8xjgRY2rVvBDo9WjfbWZ0QofVd93xfnuOj1MRxkwhy4TMrj61bZl6pQalzqq_XId_2C_eDktL</recordid><startdate>20030116</startdate><enddate>20030116</enddate><creator>Shin, Hyun-Koock</creator><scope>EFI</scope></search><sort><creationdate>20030116</creationdate><title>Compounds for forming alumina films using chemical vapor deposition method and process for preparing the compound</title><author>Shin, Hyun-Koock</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_applications_200300102563</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Shin, Hyun-Koock</creatorcontrib><collection>USPTO Published Applications</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shin, Hyun-Koock</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Compounds for forming alumina films using chemical vapor deposition method and process for preparing the compound</title><date>2003-01-16</date><risdate>2003</risdate><abstract>Organometallic compounds useful for forming aluminum films by chemical vapor deposition are disclosed. Also disclosed are methods of preparing the organometallic compounds and methods of forming aluminum films.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_applications_20030010256
source USPTO Published Applications
title Compounds for forming alumina films using chemical vapor deposition method and process for preparing the compound
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T14%3A20%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFI&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Shin,%20Hyun-Koock&rft.date=2003-01-16&rft_id=info:doi/&rft_dat=%3Cuspatents_EFI%3E20030010256%3C/uspatents_EFI%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true