Methods and apparatus for producing stable low k FSG film for HDP-CVD
Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF 4...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF
4
), oxygen (O
2
), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O
2
levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe. |
|---|