Deposition of tungsten silicide films
A method of forming tungsten suicide (WSi x ) films is provided. The tungsten suicide (WSi x ) films are formed by reacting a tungsten source with a silicon source at a temperature greater than about 600° C. The as-deposited tungsten suicide (WSi x ) layer has a resistivity less than about 60 -cm.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of forming tungsten suicide (WSi
x
) films is provided. The tungsten suicide (WSi
x
) films are formed by reacting a tungsten source with a silicon source at a temperature greater than about 600° C. The as-deposited tungsten suicide (WSi
x
) layer has a resistivity less than about 60 -cm. |
|---|