Structure and process for buried bitline and single sided buried conductor formation

Semiconductor devices generally, and in particular DRAM memory devices, having buried, single-sided conductors are provided. Additionally, methods of fabricating semiconductor devices having buried, single-sided conductors are provided.

Bibliographische Detailangaben

Hauptverfasser:	Athavale, Satish, Divakaruni, Ramachandra, Mandelman, Jack
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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