Structure and process for buried bitline and single sided buried conductor formation
Semiconductor devices generally, and in particular DRAM memory devices, having buried, single-sided conductors are provided. Additionally, methods of fabricating semiconductor devices having buried, single-sided conductors are provided.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | Semiconductor devices generally, and in particular DRAM memory devices, having buried, single-sided conductors are provided. Additionally, methods of fabricating semiconductor devices having buried, single-sided conductors are provided. |
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