Bis (tertiarybutylamino) silane and ozone based doped and undoped oxides

A CVD process for the deposition of silicon oxide by reacting BTBAS with an ozone reactant gas comprising providing a semiconductor wafer substrate in a single wafer reactor, contacting said substrate with a gaseous mixture containing a bis-tertiary butyl aminosilane reactant and an ozone reactant a...

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Hauptverfasser:	Chakravarti, Ashima, Conti, Richard, Kapkin, Kerem, Sisson, Joseph
Format:	Patent
Sprache:	eng
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creator	Chakravarti, Ashima Conti, Richard Kapkin, Kerem Sisson, Joseph
description	A CVD process for the deposition of silicon oxide by reacting BTBAS with an ozone reactant gas comprising providing a semiconductor wafer substrate in a single wafer reactor, contacting said substrate with a gaseous mixture containing a bis-tertiary butyl aminosilane reactant and an ozone reactant at a pressure ranging from about 10 Torr to about 760 Torr, and, heating said mixture at a temperature ranging from about 400 to about 600° C., whereby said reactants are reacted to deposit said oxide as a film on said substrate.
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title	Bis (tertiarybutylamino) silane and ozone based doped and undoped oxides
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