Bis (tertiarybutylamino) silane and ozone based doped and undoped oxides

A CVD process for the deposition of silicon oxide by reacting BTBAS with an ozone reactant gas comprising providing a semiconductor wafer substrate in a single wafer reactor, contacting said substrate with a gaseous mixture containing a bis-tertiary butyl aminosilane reactant and an ozone reactant at a pressure ranging from about 10 Torr to about 760 Torr, and, heating said mixture at a temperature ranging from about 400 to about 600° C., whereby said reactants are reacted to deposit said oxide as a film on said substrate.