Control of Vmin transient voltage drift by using silicon formed with deuterium-based process gases

Control of Vmin transient voltage drift by using silicon formed with deuterium-based process gases

A method for fabricating a non-FLASH integrated circuit that minimizes Vmin shift. A protective overcoat ( 134 ) is deposited to protect and encapsulate the top metal interconnect layer ( 118 ). The protective overcoat comprises silicon nitride formed using deuterium based process gases (e.g. SiD 4...

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Hauptverfasser: Brugler, Mercer, Zuhoski, Steven, Gross, Cameron, Mickler, Edward
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Sprache:eng
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creator Brugler, Mercer
Zuhoski, Steven
Gross, Cameron
Mickler, Edward
description A method for fabricating a non-FLASH integrated circuit that minimizes Vmin shift. A protective overcoat ( 134 ) is deposited to protect and encapsulate the top metal interconnect layer ( 118 ). The protective overcoat comprises silicon nitride formed using deuterium based process gases (e.g. SiD 4 and ND 3 ) instead of hydrogen-based process gases. The protective overcoat ( 134 ) is patterned and etched to form bondpad windows either before or after depositing the final metal interconnect layer ( 136 ).
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title Control of Vmin transient voltage drift by using silicon formed with deuterium-based process gases
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