Control of Vmin transient voltage drift by using silicon formed with deuterium-based process gases
A method for fabricating a non-FLASH integrated circuit that minimizes Vmin shift. A protective overcoat ( 134 ) is deposited to protect and encapsulate the top metal interconnect layer ( 118 ). The protective overcoat comprises silicon nitride formed using deuterium based process gases (e.g. SiD 4...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for fabricating a non-FLASH integrated circuit that minimizes Vmin shift. A protective overcoat (
134
) is deposited to protect and encapsulate the top metal interconnect layer (
118
). The protective overcoat comprises silicon nitride formed using deuterium based process gases (e.g. SiD
4
and ND
3
) instead of hydrogen-based process gases. The protective overcoat (
134
) is patterned and etched to form bondpad windows either before or after depositing the final metal interconnect layer (
136
). |
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