Semiconductor device and manufacturing method of the semiconductor device

The package size of a diode is made smaller. On the element forming face of a semiconductor substrate having a p − -type conductive type, after a hyper-abrupt p + n + junction of a p + -type diffusion layer, an n + -type hyper-abrupt layer, an n − -epitaxial layer, an n-type low resistance layer and an n + -type diffusion layer is formed, an anode electrode is formed on the top of the p + -type diffusion layer and a cathode electrode is formed on the top of the n + -type diffusion layer. Thereafter, electrode bumps are formed on the top of the anode electrode and the cathode electrode to thereby manufacture a small diode that can be facedown bonded onto a mounting board.