EEPROM circuit, in particular a microcontroller including read while write EEPROM for code and data storing

Presented is an EEPROM circuit comprising: a program array of a matrix of EEPROM cells arranged in columns and rows, a data array of a matrix of EEPROM cells arranged in columns and rows, the cells of the program and data array capable of being written, read, and erased; a reference voltage circuit coupled to the program array capable of producing voltages used to write to and erase data from the program array; a current generation circuit coupled to the program array for supplying current to the program array in operation. Advantageously according to the invention, the reference voltage circuit and the current generation circuit are additionally coupled to the data array. Moreover, the EEPROM circuit further comprises means for selectively connecting at least one of the rows of the program array to one of the rows of the data array, and for selectively connecting at least one of the columns of the program array to one of the columns of the data array.