Plasma treatment method and apparatus

Plasma treatment method and apparatus

A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f 1 lower than an inherent lower ion...

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Bibliographische Detailangaben
Hauptverfasser: Tomoyasu, Masayuki, Koshiishi, Akira, Imafuku, Kosuke, Endo, Shosuke, Tahara, Kazuhiro, Naito, Yukio, Nagaseki, Kazuya, Hirose, Keizo, Komino, Mitsuaki, Takenaka, Hiroto, Nishikawa, Hiroshi, Sakamoto, Yoshio
Format: Patent
Sprache:eng
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Zusammenfassung:A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f 1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f 2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.