Wafer trench article and process
A bonded wafer 100 has a device substrate 16 with isolation trenches 30 defining device regions 18. Oxide dogbone structures are removed before filling trenches 30 . Voids 36 in the trenches are spaced from the top of the trenches. The trenches are covered with an oxide layer 30 and filled with poly...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A bonded wafer
100
has a device substrate
16
with isolation trenches
30
defining device regions
18.
Oxide dogbone structures are removed before filling trenches
30
. Voids
36
in the trenches are spaced from the top of the trenches. The trenches are covered with an oxide layer
30
and filled with polysilicon
34.
A LOCOS mask structure comprising a layer of CVD pad oxide and silicon nitride
50
cover the trenches and the adjacent device substrate regions. |
|---|