Method of depositing a metallic film on a substrate
The present invention relates to a method of depositing a metallic film on a substrate. This method uses a carrier gas to deposit a source metal in the presence of an aqueous reducing agent such that the rate of deposition can be controlled by controlling the flow rate of the carrier gas.
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | The present invention relates to a method of depositing a metallic film on a substrate. This method uses a carrier gas to deposit a source metal in the presence of an aqueous reducing agent such that the rate of deposition can be controlled by controlling the flow rate of the carrier gas. |
|---|