Method of forming metal oxide gate structures and capacitor electrodes
An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (step 118 of FIG. 1 ) that remains subst...
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| creator | Wilk, Glen Wallace, Robert Anthony, John McIntyre, Paul |
| description | An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (step
118
of FIG.
1
) that remains substantially conductive after it is oxidized; forming an electrically insulative layer (step
116
of FIG.
1
) between the second structure and the conductive structure; and oxidizing the conductive structure by subjecting it to an ozone containing atmosphere for a duration of time and at a first temperature. |
| format | Patent |
| fullrecord | <record><control><sourceid>uspatents_EFI</sourceid><recordid>TN_cdi_uspatents_applications_20010053593</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>20010053593</sourcerecordid><originalsourceid>FETCH-uspatents_applications_200100535933</originalsourceid><addsrcrecordid>eNqVzDEKAjEQQNE0FqLeYVoLIRq2sF5cbOzslyGZrIFsJmQm4PG18AJWv3n8rZkepC8OwBEitzWVBVZSzMDvFAgWVALR1r32RgJYAnis6JNyA8rktXEg2ZtNxCx0-HVnjtPtOd5PXep3UVRmrDUnj5q4yHyx9mzt4Iarc__YDw9DOsE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of forming metal oxide gate structures and capacitor electrodes</title><source>USPTO Published Applications</source><creator>Wilk, Glen ; Wallace, Robert ; Anthony, John ; McIntyre, Paul</creator><creatorcontrib>Wilk, Glen ; Wallace, Robert ; Anthony, John ; McIntyre, Paul</creatorcontrib><description>An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (step
118
of FIG.
1
) that remains substantially conductive after it is oxidized; forming an electrically insulative layer (step
116
of FIG.
1
) between the second structure and the conductive structure; and oxidizing the conductive structure by subjecting it to an ozone containing atmosphere for a duration of time and at a first temperature.</description><language>eng</language><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20010053593$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,869,881,64032</link.rule.ids><linktorsrc>$$Uhttps://patentcenter.uspto.gov/applications/09870631$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Wilk, Glen</creatorcontrib><creatorcontrib>Wallace, Robert</creatorcontrib><creatorcontrib>Anthony, John</creatorcontrib><creatorcontrib>McIntyre, Paul</creatorcontrib><title>Method of forming metal oxide gate structures and capacitor electrodes</title><description>An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (step
118
of FIG.
1
) that remains substantially conductive after it is oxidized; forming an electrically insulative layer (step
116
of FIG.
1
) between the second structure and the conductive structure; and oxidizing the conductive structure by subjecting it to an ozone containing atmosphere for a duration of time and at a first temperature.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2001</creationdate><recordtype>patent</recordtype><sourceid>EFI</sourceid><recordid>eNqVzDEKAjEQQNE0FqLeYVoLIRq2sF5cbOzslyGZrIFsJmQm4PG18AJWv3n8rZkepC8OwBEitzWVBVZSzMDvFAgWVALR1r32RgJYAnis6JNyA8rktXEg2ZtNxCx0-HVnjtPtOd5PXep3UVRmrDUnj5q4yHyx9mzt4Iarc__YDw9DOsE</recordid><startdate>20011220</startdate><enddate>20011220</enddate><creator>Wilk, Glen</creator><creator>Wallace, Robert</creator><creator>Anthony, John</creator><creator>McIntyre, Paul</creator><scope>EFI</scope></search><sort><creationdate>20011220</creationdate><title>Method of forming metal oxide gate structures and capacitor electrodes</title><author>Wilk, Glen ; Wallace, Robert ; Anthony, John ; McIntyre, Paul</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_applications_200100535933</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Wilk, Glen</creatorcontrib><creatorcontrib>Wallace, Robert</creatorcontrib><creatorcontrib>Anthony, John</creatorcontrib><creatorcontrib>McIntyre, Paul</creatorcontrib><collection>USPTO Published Applications</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wilk, Glen</au><au>Wallace, Robert</au><au>Anthony, John</au><au>McIntyre, Paul</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of forming metal oxide gate structures and capacitor electrodes</title><date>2001-12-20</date><risdate>2001</risdate><abstract>An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (step
118
of FIG.
1
) that remains substantially conductive after it is oxidized; forming an electrically insulative layer (step
116
of FIG.
1
) between the second structure and the conductive structure; and oxidizing the conductive structure by subjecting it to an ozone containing atmosphere for a duration of time and at a first temperature.</abstract><oa>free_for_read</oa></addata></record> |
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| source | USPTO Published Applications |
| title | Method of forming metal oxide gate structures and capacitor electrodes |
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