Method of forming metal oxide gate structures and capacitor electrodes

An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (step 118 of FIG. 1 ) that remains substantially conductive after it is oxidized; forming an electrically insulative layer (step 116 of FIG. 1 ) between the second structure and the conductive structure; and oxidizing the conductive structure by subjecting it to an ozone containing atmosphere for a duration of time and at a first temperature.