PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter

PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter

Ti and TiN layers are formed on an integrated circuit substrate using a titanium target in non-nitrided mode in a hollow cathode magnetron apparatus. Neither a collimator nor a shield is used. Ti and TiN layers are deposited in vias and trenches having aspect ratios up to 5:1.

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Bibliographische Detailangaben
Hauptverfasser: D'Couto, Gerard, Tkach, George, Lyons, Jeff, Biberger, Max, Lai, Kwok, Lu, Jean, Ashtiani, Kaihan
Format: Patent
Sprache:eng
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Zusammenfassung:Ti and TiN layers are formed on an integrated circuit substrate using a titanium target in non-nitrided mode in a hollow cathode magnetron apparatus. Neither a collimator nor a shield is used. Ti and TiN layers are deposited in vias and trenches having aspect ratios up to 5:1.