Lower temperature method for forming high quality silicon-nitrogen dielectrics
A method for forming a thermal silicon nitride on a semiconductor substrate is disclosed. This method allows formation of thermal silicon nitride that is thick enough for a FET gate dielectric, but has a low thermal budget.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for forming a thermal silicon nitride on a semiconductor substrate is disclosed. This method allows formation of thermal silicon nitride that is thick enough for a FET gate dielectric, but has a low thermal budget. |
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