NORMALLY-CLOSED DEVICE AND FABRICATION METHOD THEREOF

The present disclosure relates to the technical field of semiconductors, and provides a normally-closed device and a fabrication method thereof. The normally-closed device comprises a substrate; an epitaxial layer connected to the substrate, wherein the epitaxial layer comprises a first P-type nitride layer and a modified layer, the modified layer is located on two sides of the first P-type nitride layer, the modified layer is formed by modifying a second P-type nitride layer in a preset region, and the first P-type nitride layer and the second P-type nitride layer are formed by epitaxially growing synchronously; a barrier layer connected to the first P-type nitride layer and the modified layer; and a gate electrode connected to the barrier layer, and a source electrode and a drain electrode connected to the modified layer.