Determination of the time constant distribution of a defect-centric time-dependent variability model for Sub-100-nm FETs

The origin of some time-dependent variability phenomena in FET technologies has been attributed to the charge carrier trapping/detrapping activity of individual defects present in devices. Although some models have been presented to describe these phenomena from the so-called defect-centric perspective, limited attention has been paid to the complex process that goes from the experimental data of the phenomena up to the final construction of the model and all its components, specifically the one that pertains to the time constant distribution. This article presents a detailed strategy aimed at determining the defect time constant distribution, specifically tailored for small area devices, using data obtained from conventional characterization procedures.