Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films

Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films

The formation of ultrathin silicide films of Ni1−xPtx at 450–850 °C is reported. Without Pt (x=0) and for tNi

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Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2010-01, Vol.96 (3), p.031911
Hauptverfasser: Luo, Jun, Qiu, Zhijun, Zha, Chaolin, Zhang, Zhen, Wu, Dongping, Lu, Jun, Åkerman, Johan, Östling, Mikael, Hultman, Lars, Zhang, Shi-Li
Format: Artikel
Sprache:eng
Schlagworte:
Annan elektroteknik och elektronik
annealing
Condensed Matter Physics
COSI2
crystal morphology
Den kondenserade materiens fysik
Fysik
metallic epitaxial layers
nanostructured materials
NATURAL SCIENCES
NATURVETENSKAP
nickel alloys
nickel compounds
NISI
Other Electrical Engineering, Electronic Engineering, Information Engineering
Physical Sciences
Physics
surface energy
TECHNOLOGY
TEKNIKVETENSKAP
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Beschreibung
Zusammenfassung:The formation of ultrathin silicide films of Ni1−xPtx at 450–850 °C is reported. Without Pt (x=0) and for tNi
ISSN:0003-6951
1077-3118
1077-3118
DOI:10.1063/1.3291679