Iodide-Based Atomic Layer Deposition of ZrO2: Aspects of Phase Stability and Dielectric Properties

This study is an investigation into the influence of temperature, substrate, and thickness on the properties of ZrO2 thin films grown by atomic layer deposition (ALD). ZrI4 and H2O2 were used as source materials, and films deposited at temperatures between 250 °C and 500 °C consisted of mixed tetragonal and monoclinic ZrO2. The phase content and electrical properties of films of 3–30 nm thickness were studied for different temperatures and substrates. The films crystallized at smaller thicknesses on the Pt/Ti/SiO2/Si (denoted Pt in the following text) substrate than on polycrystalline Si (poly‐Si) and MgO(001). It was also found that the film thickness had a stronger effect on the dielectric constant than either the growth temperature or the substrate. Factors influencing the properties of ZrO2 films prepared by atomic layer deposition (ALD) are investigated. The effect of deposition temperature, type of substrate, and film thickness are studied in the temperature range of 250 to 500 °C on Pt, Si(100) poly‐Si, and α‐Al2O3 surfaces. The electrical properties of the films are evaluated and structural analysis of layers deposited on Pt (see Figure) and Si(100) indicate the presence of mixed tetragonal and monoclinic ZrO2.