High-voltage single-crystal diamond diodes

Demonstration of a 2.5-kV diamond diode is provided by electrical measurements using a circular gold Schottky contact, with an area >1 mm/sup 2/, on large area freestanding single-crystal diamond consisting of a thin high purity layer (1/spl times/0/sup 19/ [B]/cm/sup 3/) substrate with an ohmic...

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Veröffentlicht in:	IEEE transactions on electron devices 2004-05, Vol.51 (5), p.826-828
Hauptverfasser:	Twitchen, D.J., Whitehead, A.J., Coe, S.E., Isberg, J., Hammersberg, J., Wikstrom, T., Johansson, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Contact CVD Devices Diamond Diodes Electric contacts Electrical measurement Electronics Engineering Science with specialization in Electronics Engineering Science with specialization in Science of Electricity Phonons Purity Schottky diodes Semiconductor device manufacture Semiconductor diodes Single crystals Teknisk fysik med inriktning mot elektricitetslära Teknisk fysik med inriktning mot elektronik
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Zusammenfassung:	Demonstration of a 2.5-kV diamond diode is provided by electrical measurements using a circular gold Schottky contact, with an area >1 mm/sup 2/, on large area freestanding single-crystal diamond consisting of a thin high purity layer (1/spl times/0/sup 19/ [B]/cm/sup 3/) substrate with an ohmic back contact. The diode structures were fabricated using a microwave-assisted chemical vapor deposition process. The forward properties of the diode show a space charge limited current, with a forward-voltage drop of 2 V and a hole mobility of 4100/spl plusmn/400 cm/sup 2//Vs at room temperature. For temperatures between 300 K
ISSN:	0018-9383 1557-9646 1557-9646
DOI:	10.1109/TED.2004.826867