Reactive deposition of TiN films by magnetron with magnetized hollow cathode enhanced target

Magnetized Hollow Cathode Activated Magnetron in which the target is coupled with the hollow cathode magnetized by the magnetic field of the magnetron was tested in the reactive process of TiN deposition. Increased deposition rate compared to the Ti metal deposition rate was confirmed. The depositions as well as optical measurements were performed at several pressures in the reactor. The results of the TiN reactive deposition are presented and discussed, including the TiN deposition in pure nitrogen. •The reactive deposition rate of TiN is higher than the deposition rate of Ti.•Stoichiometric TiN films are obtained already at low contents of nitrogen.•Stoichiometric coatings are deposited also in pure nitrogen.